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1.5SMC12 Datasheet(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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1.5SMC12 Datasheet(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
3 / 4 page - 556 - ELECTRICAL CHARACTERISTICS (TA=25 OC unless otherwise noted) Breakdown Voltage Stand-Off Maximum Maximum Maximum Maximum GENERAL Device VBR Test Curre Voltage Reverse Leakage Peak Surge Clamping Temperature PART Marking (Volts) (Note 1) @IT(mA) VWM at Vwm Current IPPM Voltage at IPPM Coefficient NUMBER Code Min Max (Volts) ID (uA) (Note 2)(Amps) VC(Volts) of VBR(% / OC) 1.5SMC100 FWJ 90.0 110.0 1.0 81.0 5.0 10.9 144.0 0.106 1.5SMC100A FXJ 95.0 105.0 1.0 85.5 5.0 11.4 137.0 0.106 1.5SMC110 FYJ 99.0 121.0 1.0 89.2 5.0 9.9 158.0 0.107 1.5SMC110A FZJ 105.0 116.0 1.0 94.0 5.0 10.3 152.0 0.107 1.5SMC120 GDJ 108.0 132.0 1.0 97.2 5.0 9.1 173.0 0.107 1.5SMC120A GEJ 114.0 126.0 1.0 102.0 5.0 9.5 165.0 0.107 1.5SMC130 GFJ 117.0 143.0 1.0 106.0 5.0 8.4 187.0 0.107 1.5SMC130A GGJ 124.0 137.0 1.0 111.0 5.0 8.7 179.0 0.107 1.5SMC150 GHJ 135.0 165.0 1.0 121.0 5.0 7.3 215.0 0.108 1.5SMC150A GKJ 143.0 158.0 1.0 128.0 5.0 7.6 207.0 0.108 1.5SMC160 GLJ 144.0 176.0 1.0 130.0 5.0 6.8 230.0 0.108 1.5SMC160A GMJ 152.0 168.0 1.0 136.0 5.0 7.1 219.0 0.108 1.5SMC170 GNJ 153.0 187.0 1.0 138.0 5.0 6.4 244.0 0.108 1.5SMC170A GPJ 162.0 179.0 1.0 145.0 5.0 6.7 234.0 0.108 1.5SMC180 GQJ 162.0 198.0 1.0 146.0 5.0 6.1 258.0 0.108 1.5SMC180A GRJ 171.0 189.0 1.0 154.0 5.0 6.4 246.0 0.108 1.5SMC200 GSJ 180.0 220.0 1.0 162.0 5.0 5.4 287.0 0.108 1.5SMC200A GTJ 190.0 210.0 1.0 171.0 5.0 5.7 274.0 0.108 Notes: 1. VBR measured after IT applied for 300us, IT =square wave pulse or equivalent. 2. Surge current waveform per Figure 3 and derate per Figure 2. 3. For bipolar types having VWM of 10 volts and under, the ID limit is doubled. 4. For bidirectional use C or Ca suffix for types 1.5SMC 6.8 through 1.5SMC200A. 5. All terms and symbols are consistent with ANSI/IEEE C62.35. |
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