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IS42S16128-12T Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc |
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IS42S16128-12T Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc |
1 / 75 page IS42S16128 ISSI® Integrated Silicon Solution, Inc. — 1-800-379-4774 1 Rev. A 03/13/00 ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc. FEATURES • Clock frequency: 125 MHz, 100 MHz, 83 MHz • Two banks can be operated simultaneously and independently • Single 3.3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • Auto refresh, self refresh • 1K refresh cycles every 16 ms • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Byte controlled by LDQM and UDQM • Package 400-mil 50-pin TSOP II DESCRIPTION ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM PIN CONFIGURATIONS 50-Pin TSOP (Type II) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 VCC I/O0 I/O1 GNDQ I/O2 I/O3 VCCQ I/O4 I/O5 GNDQ I/O6 I/O7 VCCQ LDQM WE CAS RAS CS A9 A8 A0 A1 A2 A3 VCC GND I/O15 I/O14 GNDQ I/O13 I/O12 VCCQ I/O11 I/O10 GNDQ I/O9 I/O8 VCCQ NC UDQM CLK CKE NC NC NC A7 A6 A5 A4 GND FEBRUARY 2000 PIN DESCRIPTIONS A0-A9 Address Input A0-A8 Row Address Input A9 Bank Select Address A0-A7 Column Address Input I/O0 to I/O15 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command WE Write Enable LDQM Lower Bye, Input/Output Mask UDQM Upper Bye, Input/Output Mask Vcc Power GND Ground VccQ Power Supply for I/O Pin GNDQ Ground for I/O Pin NC No Connection ORDERING INFORMATION Commercial Range: 0 ⋅⋅⋅⋅⋅C to 70⋅⋅⋅⋅⋅C Frequency Speed (ns) Order Part No. Package 125 MHz 8 IS42S16128-8T 400-mil TSOP II 100 MHz 10 IS42S16128-10T 400-mil TSOP II 83 MHz 12 IS42S16128-12T 400-mil TSOP II |
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