IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH24N60AU1

IXGH24N60AU1S

1. Gate

2. Collector

3. Emitter

4. Collector

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.83

5.21

.190

.205

A1

2.29

2.54

.090

.100

A2

1.91

2.16

.075

.085

b

1.14

1.40

.045

.055

b1

1.91

2.13

.075

.084

C

0.61

0.80

.024

.031

D

20.80

21.34

.819

.840

E

15.75

16.13

.620

.635

e

5.45

BSC

.215

BSC

L

4.90

5.10

.193

.201

L1

2.70

2.90

.106

.114

L2

2.10

2.30

.083

.091

L3

0.00

0.10

.00

.004

L4

1.90

2.10

.075

.083

ØP

3.55

3.65

.140

.144

Q

5.59

6.20

.220

.244

R

4.32

4.83

.170

.190

S

6.15

BSC

.242

BSC

TO-247 SMD Outline

TO-247 AD Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

e

∅ P

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

9

13

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

1500

pF

C

oes

V

175

pF

C

res

40

pF

Q

g

90

120

nC

Q

ge

I

11

15

nC

Q

gc

30

40

nC

t

d(on)

25

ns

t

ri

15

ns

E

on

0.6

mJ

t

d(off)

150

200

ns

t

fi

110

270

ns

E

off

1.5

mJ

t

d(on)

25

ns

t

ri

15

ns

E

on

0.8

mJ

t

d(off)

250

ns

t

fi

400

ns

E

off

2.3

mJ

R

thJC

0.83 K/W

R

thCK

0.25

K/W

Inductive load, T

°°°°C

I

V

Remarks: Switching times may increase

for V

increased R

G

Inductive load, T

°°°°C

I

V

Remarks: Switching times may increase

for V

increased R

G

Min. Recommended Footprint

(Dimensions in inches and (mm))

Reverse Diode (FRED)

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

V

F

I

1.6

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

I

RM

I

15

A

t

rr

V

T

125

°C 150

ns

I

25

°C35

50

ns

R

thJC

1 K/W