IXGH24N60BU1 datasheet(1/6 Pages) IXYS

Part #	IXGH24N60BU1

Description	HiPerFAST IGBT with Diode

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Manufacturer	IXYS [IXYS Corporation]

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Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

BV

CES

I

C

= 750

µA, V

GE = 0 V

600

V

GE(th)

I

C

= 250

µA, V

CE = VGE

2.5

5.5

V

I

CES

V

CE = 0.8 • VCES

T

J = 25°C

500

µA

V

GE = 0 V

T

J = 125°C8

mA

I

GES

V

CE = 0 V, VGE = ±20 V

±100

nA

V

CE(sat)

I

C

= I

C90, VGE = 15 V

2.3

V

DS95583C(01/03)

Features

• High frequency IGBT and antiparallel

FRED in one package

• High current handling capability

• 3rd generation HDMOSTM process

• MOS Gate turn-on

- drive simplicity

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptible power supplies

(UPS)

• Switched-mode and resonant-mode

power supplies

Advantages

• Space savings (two devices in one

package)

• High power density

• Suitable for surface mounting

• Switching speed for high frequency

applications

• Easy to mount with 1 screw

(insulated mounting screw hole)

HiPerFASTTM IGBT

with Diode

G = Gate

C = Collector

E = Emitter

TAB = Collector

G

C

E

TO-247 AD

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25

°C to 150°C

600

V

CGR

T

J

= 25

°C to 150°C; R

GE = 1 MΩ

600

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C48

A

I

C90

T

C = 90°C24

A

I

CM

T

C = 25°C, 1 ms

96

A

SSOA

V

GE = 15 V, TVJ = 125°C, RG = 22 Ω

I

CM = 48

A

(RBSOA)

Clamped inductive load, L = 100

µH

@ 0.8 V

CES

P

C

T

C = 25°C

150

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

Maximum Lead and Tab temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

6g

C (TAB)

IXGH 24N60BU1

V

CES

= 600 V

I

C25

=

48 A

V

CE(sat)

= 2.3 V

t

fi

=

80 ns

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