Q67040-S4649 datasheet(2/14 Pages) INFINEON

Part #	Q67040-S4649

Description	HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKA03N120H2

Power Semiconductors

2

Mar-04, Rev. 2

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

RthJC

4.3

Diode thermal resistance,

junction - case

RthJCD

5.8

Thermal resistance,

junction – ambient

RthJA

P-TO-220-3-31

P-TO-220-3-34

62

K/W

Electrical Characteristic, at Tj = 25

°C, unless otherwise specified

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

Static Characteristic

Collector-emitter breakdown voltage

V(BR)CES VGE=0V, IC=300

µA

1200

-

Collector-emitter saturation voltage

VCE(sat)

VGE = 15V, IC=3A

Tj=25

°C

Tj=150

°C

VGE = 10V, IC=3A,

Tj=25

°C

-

2.2

2.5

2.4

2.8

-

Diode forward voltage

VF

VGE = 0, IF=3A

Tj=25

°C

Tj=150

°C

-

1.55

1.6

-

Gate-emitter threshold voltage

VGE(th)

IC=90

µA,VCE=VGE

2.1

3

3.9

V

Zero gate voltage collector current

ICES

VCE=1200V,VGE=0V

Tj=25

°C

Tj=150

°C

-

20

80

µA

Gate-emitter leakage current

IGES

VCE=0V,VGE=20V

-

100

nA

Transconductance

gfs

VCE=20V, IC=3A

-

2

-

S

Dynamic Characteristic

Input capacitance

Ciss

-

205

-

Output capacitance

Coss

-

24

-

Reverse transfer capacitance

Crss

VCE=25V,

VGE=0V,

f=1MHz

-

7

-

pF

Gate charge

QGate

VCC=960V, IC=3A

VGE=15V

-

8.6

-

nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

LE

P-TO-220-3-1

-

7

-

nH

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