MAY 2002 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics, TA = 25 °°°°°C (Unless Otherwise Noted)
TISP6L7591 SLIC Protector
Absolute Maximum Ratings, TA = 25 °°°°°C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak TIP or RING off-state voltage, V(VS)(TIP) = 0, V(VS)(RING) = 0
V(TIP)M, V(RING)M
-100
V
Repetitive peak VS voltage, VTIP = 0, VRING = 0
V(VS)M
-80
V
Non-repetitive peak pulse current (see Notes 1, 2 and 3)
IPP
A
10/1000 µs (Bellcore GR-1089-CORE, open-circuit voltage wave shape 10/1000 µs)
5/320 µs (ITU-T K.20 & K.21, open-circuit voltage wave shape 10/700 µs)
2/10 µs (Bellcore GR-1089-CORE, open-circuit voltage wave shape 2/10 µs)
30
40
80
Non-repetitive peak on-state current, 50 Hz to 60 Hz (see Notes 1, 2 and 3)
ITSM
A
10 ms
5
1s
3.5
Non-repetitive peak VS current, half sine wave 10 ms, cathodes commoned (see Note 1)
I(VS)M
+2
A
Operating free-air temperature range
TA
-40 to +85
°C
Storage temperature range
Tstg
-40 to +125
°C
NOTES: 1. Initially the protector must be in thermal equilibrium. The surge may be repeated after the device returns to its initial conditions.
2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied either to the Ring
to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied
simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair).
3. Supply Voltage, VS, range -20 V to -80 V.
Parameter
Test Conditions
Min
Typ
Max
Unit
VF
Forward voltage
IP =5 A, tP =1 ms
3
V
VFP
Peak forward voltage
IPP = 30 A, 10/1000
15
V
IGT
Gate trigger current
VS = -48 V
0.2
15
mA
IH
Holding current
tP = 10 ms, VS = -48 V
-150
mA
VT
Trip voltage
d.c.
VS-2.8
V
VSGL
Dynamic trip voltage
IPP = -30 A, 10/1000, VS = -48 V
-63
V
IRG
Reverse gate current
VS = -75 V, VTIP = 0, VRING =0
TA = 25 °C-5
µA
TA = 70 °C
-50
µA
dvR/dt
Critical rate of voltage
rise
TIP or RING lead
±1000
V/µs
VON
On-state voltage
IT = -0.5 A, tP =1 ms
IT = -3.0 A, tP =1 ms
-3
-4
V
IR
Reverse current
(Gate open)
VR = -85 V, IG =0
TA = 25 °C-5
µA
TA = 70 °C
-50
µA
Coff
TIP or RING to GND
off-state capacitance
f = 1 MHz, Vd =1 V, IG = 0, (see Note 4)
VR =-3 V
50
pF
VR = -48 V
40
pF
NOTE 4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
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