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TPCF8104 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TPCF8104 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 3 page TOSHIBA TPCF8104 ELECTRICAL CHARACTERISTICS(Ta=25℃) CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Gate Leakage Current IGSS VGS=±16V,VDS=0V − − ±10 μA Drain Cut-off Current IDSS VDS=-30V,VGS=0V − − -10 μA V(BR)DSS ID=-10mA,VGS=0V -30 − − V Drain-Source Breakdown Voltage V(BR)DSX ID=-10mA,VGS=20V -15 − − V Gate Threshold Voltage Vth VDS=-10V,ID=-1mA -0.8 − -2.0 V Drain-Source ON Resistance RDS(ON) VGS=-4.5V,ID=3A − 37 46 mΩ VGS=-10V,ID=-3A − 26 33 Forward Transfer Admittance │Yfs│ VDS=-10V,ID=-3A TBD TBD − S Input Capacitance Ciss − TBD − Reverse Transfer Capacitance Crss − TBD − Output Capacitance Coss VDS=-10V,VGS=0V f=1MHz − TBD − pF Rise Time tr − TBD − Turn-on Time ton − TBD − Fall Time tf − TBD − Switching Time Turn-off Time toff − TBD − ns Total Gate Charge (Gate-Source Plus Gate-Drain) Qg − TBD − Gate-Source Charge Qgs − TBD − Gate-Drain(“Miller”)Charge Qgd VDD≒-24V,VGS=-10V ID=-6A − TBD − nC SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS(Ta=25℃) CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Pulse Drain Reverse Current (Note1) IDRP − − − -24 A Diode Forward Voltage VDSF IDR=-6A,VGS=0V − − 1.2 V Note1 Please use devices on condition that the channel temperature is below 150℃. Note2: (a) Device mounted on glass-epoxy board (a) (b) Device mounted on glass-epoxy board (b) FR-4 FR-4 25.4×25.4×0.8 25.4×25.4×0.8 (Unit in mm) (Unit in mm) (a) (b) Note3: VDD=-24V, Tch=25℃(initial), L=0.5mH, RG=25Ω, IAR=-3.0A Note4: Repetitive rating ; Pulse Width Limited by Max. Channel Temperature. RL=5Ω VOUT VDD≒-15V ID=-3.0A 0V VGS -10V Duty≦1%,tw=10us 4.7Ω Tentative Tentative Tentative Tentative |
Similar Part No. - TPCF8104 |
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Similar Description - TPCF8104 |
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