TPCF8104 datasheet(2/3 Pages) TOSHIBA

Part #	TPCF8104

Description	TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U-MOS4)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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ELECTRICAL CHARACTERISTICS（Ta＝25℃）

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Gate Leakage Current

ＩＧＳＳ

ＶＧＳ＝±16Ｖ，ＶＤＳ＝0Ｖ

−

±10

μＡ

Drain Cut-off Current

ＩＤＳＳ

ＶＤＳ＝-30Ｖ，ＶＧＳ＝0Ｖ

−

-10

μＡ

Ｖ(ＢＲ)ＤＳＳ

ＩＤ＝-10ｍＡ，ＶＧＳ＝0Ｖ

-30

−

Ｖ

Drain-Source Breakdown

Voltage

Ｖ(ＢＲ)ＤＳＸ

ＩＤ＝-10ｍＡ，ＶＧＳ＝20Ｖ

-15

−

Ｖ

Gate Threshold Voltage

Ｖｔｈ

ＶＤＳ＝-10Ｖ，ＩＤ＝-1mＡ

-0.8

−

-2.0

Ｖ

Drain-Source ON Resistance

ＲＤＳ(ＯＮ)

ＶＧＳ＝-4.5Ｖ，ＩＤ＝3Ａ

−

37

46

mΩ

ＶＧＳ＝-10Ｖ，ＩＤ＝-3Ａ

−

26

33

Forward Transfer Admittance

￨Ｙｆｓ￨

ＶＤＳ＝-10Ｖ，ＩＤ＝-3Ａ

TBD

−

Ｓ

Input Capacitance

Ｃｉｓｓ

−

TBD

−

Reverse Transfer Capacitance

Ｃｒｓｓ

−

TBD

−

Output Capacitance

Ｃｏｓｓ

ＶＤＳ＝-10Ｖ，ＶＧＳ＝0Ｖ

ｆ＝1ＭＨｚ

−

TBD

−

ｐＦ

Rise Time

ｔｒ

−

TBD

−

Turn-on Time

ｔｏｎ

−

TBD

−

Fall Time

ｔｆ

−

TBD

−

Switching

Time

Turn-off Time

ｔｏｆｆ

−

TBD

−

ｎｓ

Total Gate Charge (Gate-Source

Plus Gate-Drain)

Ｑｇ

−

TBD

−

Gate-Source Charge

Ｑｇｓ

−

TBD

−

Gate-Drain(“Miller”)Charge

Ｑｇｄ

ＶＤＤ≒-24Ｖ，ＶＧＳ＝-10Ｖ

ＩＤ＝-6Ａ

−

TBD

−

ｎＣ

SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS（Ta＝25℃）

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Pulse Drain Reverse Current

(Note1)

ＩＤＲＰ

−

-24

Ａ

Diode Forward Voltage

ＶＤＳＦ

ＩＤＲ＝-6Ａ，ＶＧＳ＝0Ｖ

−

1.2

Ｖ

Note1

Please use devices on condition that the channel temperature is below 150℃.

Note2:

(a) Device mounted on glass-epoxy board (a)

(b) Device mounted on glass-epoxy board (b)

FR-4

25.4×25.4×0.8

(Unit in mm)

(a)

(b)

Note3:

VDD=-24V, Tch=25℃(initial), L=0.5mH, RG=25Ω, IAR=-3.0A

Note4:

Repetitive rating ; Pulse Width Limited by Max. Channel Temperature.

RL=5Ω

VOUT

VDD≒-15V

ID=-3.0A

0V

VGS

-10V

Duty≦1%,tw=10us

4.7Ω

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