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PKC26BB Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD

Part No. PKC26BB
Description  N-Channel Enhancement Mode MOSFET
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Maker  UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]
Homepage  http://www.unikc.com.cn/
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PKC26BB Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD

  PKC26BB Datasheet HTML 1Page - Wuxi U-NIKC Semiconductor CO.,LTD  
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PKC26BB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
THERMAL RESISTANCE RATINGS
UNITS
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on Rq
JA t ≦10s value
4The maximum current rating is package limited.
Pulsed Drain Current
1
W
Junction-to-Case
VGS
Gate-Source Voltage
t ≦10s
Junction-to-Ambient
2
Junction-to-Ambient
2
Steady-State
RqJA
A
V
1.7
°C / W
73
151
50
±20
IDM
SYMBOL
Operating Junction & Storage Temperature Range
SYMBOL
°C
-55 to 150
30
IAS
57
RqJC
UNITS
200
95
TYPICAL
VDS
30
V
ID
LIMITS
162
TC = 25 °C
Avalanche Energy
L =0.1mH
RDS(ON)
Drain-Source Voltage
1.6mΩ @V
GS = 10V
151A
ID
4
TC = 25 °C
TA = 70 °C
30V
Continuous Drain Current
4
TC = 100 °C
PARAMETERS/TEST CONDITIONS
THERMAL RESISTANCE
TC = 100 °C
Power Dissipation
TJ, Tstg
PD
Steady-State
2.6
Continuous Drain Current
TA = 25 °C
mJ
29
RqJA
PD
W
ID
Avalanche Current
EAS
MAXIMUM
36
TA= 70 °C
28
Power Dissipation
3
TA = 25 °C
4.1
REV 1.0
1
2016/12/14


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