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PKC26BB Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PKC26BB Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PKC26BB N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) MIN TYP MAX 30 1.3 1.6 2.35 ±100 nA 1 10 1.6 2.3 1.1 1.6 123 S 3499 625 408 1.1 Ω VGS =10V 70 VGS =4.5V 36 9.2 17 20 120 97 150 73 A 1 V 28 nS 13 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. 3The maximum current rating is package limited. VGS = 4.5V, ID = 20A V IF = 20A, dlF/dt = 100A / mS RDS(ON) SYMBOL V(BR)DSS TEST CONDITIONS UNITS Coss VDS = 0V, VGS = ±20V gfs STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V pF IDSS Qrr Reverse Recovery Charge Continuous Current 3 Forward Voltage 1 Reverse Recovery Time IS VSD Forward Transconductance 1 trr IF = 20A, VGS = 0V nS VDS = 15V, ID @ 20A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) td(on) tr td(off) tf Turn-On Delay Time 2 Rise Time 2 Turn-Off Delay Time 2 Fall Time 2 Gate Threshold Voltage Drain-Source On-State Resistance 1 Rg Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate Resistance VDS = 5V, ID = 20A Qg Total Gate Charge 2 Ciss PARAMETER Output Capacitance Drain-Source Breakdown Voltage VGS = 10V , ID = 20A VDS = 20V, VGS = 0V, TJ = 55 °C Qgd Crss Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz VDS = 15V, VGS = 10V, ID = 20A Gate-Drain Charge 2 Gate-Source Charge 2 Reverse Transfer Capacitance Gate-Body Leakage VGS(th) LIMITS REV 1.0 2 2016/12/14 |
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