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PKC26BB Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

Part No. PKC26BB
Description  N-Channel Enhancement Mode MOSFET
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Maker  UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]
Homepage  http://www.unikc.com.cn/
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PKC26BB Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

  PKC26BB Datasheet HTML 2Page - Wuxi U-NIKC Semiconductor CO.,LTD  
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PKC26BB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
MIN
TYP
MAX
30
1.3
1.6
2.35
±100
nA
1
10
1.6
2.3
1.1
1.6
123
S
3499
625
408
1.1
Ω
VGS =10V
70
VGS =4.5V
36
9.2
17
20
120
97
150
73
A
1
V
28
nS
13
nC
1Pulse test : Pulse Width
 300 msec, Duty Cycle  2%.
2Independent of operating temperature.
3The maximum current rating is package limited.
VGS = 4.5V, ID = 20A
V
IF = 20A, dlF/dt = 100A / mS
RDS(ON)
SYMBOL
V(BR)DSS
TEST CONDITIONS
UNITS
Coss
VDS = 0V, VGS = ±20V
gfs
STATIC
nC
VGS = 0V, VDS = 0V, f = 1MHz
Qgs
mA
DYNAMIC
VDS = 24V, VGS = 0V
pF
IDSS
Qrr
Reverse Recovery Charge
Continuous Current
3
Forward Voltage
1
Reverse Recovery Time
IS
VSD
Forward Transconductance
1
trr
IF = 20A, VGS = 0V
nS
VDS = 15V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
td(on)
tr
td(off)
tf
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
Gate Threshold Voltage
Drain-Source On-State
Resistance
1
Rg
Zero Gate Voltage Drain
Current
IGSS
VDS = VGS, ID = 250mA
VGS = 0V, ID = 250mA
Gate Resistance
VDS = 5V, ID = 20A
Qg
Total Gate Charge
2
Ciss
PARAMETER
Output Capacitance
Drain-Source Breakdown
Voltage
VGS = 10V , ID = 20A
VDS = 20V, VGS = 0V, TJ = 55 °C
Qgd
Crss
Input Capacitance
VGS = 0V, VDS = 15V, f = 1MHz
VDS = 15V,
VGS = 10V, ID = 20A
Gate-Drain Charge
2
Gate-Source Charge
2
Reverse Transfer Capacitance
Gate-Body Leakage
VGS(th)
LIMITS
REV 1.0
2
2016/12/14


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