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AOD4286 Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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AOD4286 Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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N-Channel 100 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) 100 0. at VGS = 10 V N-Channel MOSFET G D S Notes: a. Surface mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) b TC = 25 °C ID A TC = 125 °C 13 Pulsed Drain Current IDM 40 Continuous Source Current (Diode Conduction) IS 3 Avalanche Current IAS 3 Single Pulse Avalanche Energy L = 0.1 mH EAS 18 mJ Maximum Power Dissipation TC = 25 °C PD 96b W TA = 25 °C 3a Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Junction-to-Ambienta t 10 s RthJA 15 18 °C/W Steady State 40 50 Junction-to-Case (Drain) RthJC 0.85 1.1 1 5 1 1 5 TO-252 S GD 14 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AOD4286 1 |
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