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AOD4454 Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

Part No. AOD4454
Description  N-Channel 150 V (D-S) MOSFET
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
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AOD4454 Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

  AOD4454 Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd  
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N-Channel 150 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Extremely Low Qgd for Switching Losses
100 % Rg Tested
100 % Avalanche Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Primary Side Switch
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
a
Qg (Typ.)
150
0.074 at VGS = 10 V
25.4
23 nC
0.077 at VGS = 8 V
22.5
N-Channel MOSFET
G
D
S
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 80 °C/W.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
150
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
25.4
A
TC = 70 °C
23.1
TA = 25 °C
15.5
b, c
TA = 70 °C
14.5b, c
Pulsed Drain Current
IDM
50
Continuous Source-Drain Diode Current
TC = 25 °C
IS
4.5
TA = 25 °C
2.6b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
20
Single Pulse Avalanche Energy
EAS
20
mJ
Maximum Power Dissipation
TC = 25 °C
PD
5.9
W
TC = 70 °C
3.8
TA = 25 °C
3.1b, c
TA = 70 °C
2b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
t
≤ 10 s
RthJA
33
40
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
17
21
TO-252
S
GD
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AOD4454
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