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AOD4454 Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

Part No. AOD4454
Description  N-Channel 150 V (D-S) MOSFET
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
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AOD4454 Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

  AOD4454 Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd  
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Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %
a. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
1 0
V
VDS Temperature Coefficient
ΔVDS /TJ
ID = 250 µA
172
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th) /TJ
- 10
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
1.5
3.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 150 V, VGS = 0 V
1
µA
VDS = 120 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 10 V, VGS = 10 V
30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 5 A
0.074
Ω
VGS = 8 V, ID = 5 A
0.077
Forward Transconductancea
gfs
VDS = 15 V, ID = 5 A
23
S
Dynamicb
Input Capacitance
Ciss
VDS = 50 V, VGS = 0 V, f = 1 MHz
1735
pF
Output Capacitance
Coss
160
Reverse Transfer Capacitance
Crss
37
Total Gate Charge
Qg
VDS = 75 V, VGS = 10 V, ID = 5 A
28.5
43
nC
VDS = 75 V, VGS = 8 V, ID = 5 A
23
35
Gate-Source Charge
Qgs
8
Gate-Drain Charge
Qgd
6.5
Gate Resistance
Rg
f = 1 MHz
0.85
1.3
Ω
Turn-on Delay Time
td(on)
VDD = 50 V, RL = 10 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
14
21
ns
Rise Time
tr
12
18
Turn-Off Delay Time
td(off)
22
33
Fall Time
tf
610
Turn-On Delay Time
td(on)
VDD = 50 V, RL = 10 Ω
ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω
16
24
Rise Time
tr
12
18
Turn-Off Delay Time
td(off)
20
30
Fall Time
tf
712
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
7.7
A
Pulse Diode Forward Currenta
ISM
50
Body Diode Voltage
VSD
IS = 2.6 A
0.77
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
63
95
ns
Body Diode Reverse Recovery Charge
Qrr
110
165
nC
Reverse Recovery Fall Time
ta
49
ns
Reverse Recovery Rise Time
tb
14
5
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AOD4454
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