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AOI4N60 Datasheet(HTML) 6 Page - VBsemi Electronics Co.,Ltd |
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AOI4N60 Datasheet(HTML) 6 Page - VBsemi Electronics Co.,Ltd |
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Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12d - Typical Drain-to Source Voltage vs. Avalanche Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit 25 50 75 100 125 150 0 200 400 600 800 Starting T , Junction Temperature ( C) J ° ID TOP BOTTOM 2.3A 3.3A 4A 700 720 740 760 780 800 01 23 4 5 6 A av I , Avalanche Current (A) QG QGS QGD VG Charge 10 V D.U.T. 3 mA V GS V DS I G I D 0.3 µF 0.2 µF 50 k Ω 12 V Current regulator Current sampling resistors Same type as D.U.T. + - www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AOI4N60 6 |
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