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AP10N70P-A Datasheet(PDF) 2 Page - VBsemi Electronics Co.,Ltd

Part # AP10N70P-A
Description  N-Channel 650V (D-S) Power MOSFET
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AP10N70P-A Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-60
°C/W
Maximum Junction-to-Case (Drain)
RthJC
-0.8
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
650
-
-
V
VDS Temperature Coefficient
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-0.75
-
V/°C
Gate-Source Threshold Voltage (N)
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
VGS = ± 30 V
-
-
± 1
μA
Zero Gate Voltage Drain Current
IDSS
VDS = 650 V, VGS = 0 V
-
-
1
μA
VDS = 520 V, VGS = 0 V, TJ = 125 °C
-
-
10
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 8 A
-
0.
Ω
Forward Transconductance
gfs
VDS = 30 V, ID = 8 A
-
16
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
2200
-
pF
Output Capacitance
Coss
-
-
Reverse Transfer Capacitance
Crss
-
-
Effective Output Capacitance, Energy
Related a
Co(er)
VDS = 0 V to 520 V, VGS = 0 V
-63
-
Effective Output Capacitance, Time
Related b
Co(tr)
-
213
-
Total Gate Charge
Qg
VGS = 10 V
ID = 8 A, VDS = 520 V
-43
-
nC
Gate-Source Charge
Qgs
-
Gate-Drain Charge
Qgd
-22
Turn-On Delay Time
td(on)
VDD = 520 V, ID = 8 A,
VGS = 10 V, Rg = 9.1
Ω
-13
ns
Rise Time
tr
-11
Turn-Off Delay Time
td(off)
-81
Fall Time
tf
-25
Gate Input Resistance
Rg
f = 1 MHz, open drain
-
3.5
-
Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
15
A
Pulsed Diode Forward Current
ISM
--
40
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 8 A, VGS = 0 V
-
-
1.5
V
Reverse Recovery Time
trr
TJ = 25 °C, IF = IS = 8 A,
dI/dt = 100 A/μs, VR = 400 V
-
345
-
ns
Reverse Recovery Charge
Qrr
-4.5
-
μC
Reverse Recovery Current
IRRM
-35
-
A
S
D
G
-
58
-5
4
20
210
-
-
-
-
-
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AP10N70P-A
2


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