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K6F2008T2E-YF55 Datasheet(PDF) 2 Page - Samsung semiconductor |
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K6F2008T2E-YF55 Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 9 page Revision 0.0 K6F2008T2E Family 2 June 2003 CMOS SRAM Preliminary 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F2008T2E families are fabricated by SAMSUNG ′s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current. FEATURES • Process Technology: Full CMOS • Organization: 256Kx8 • Power Supply Voltage: 2.7 ~ 3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 32-TSOP1-0813.4F PIN DESCRIPTION Name Function Name Function CS1, CS2 Chip Select Input I/O1~I/O8 Data Inputs/Outputs OE Output Enable Vcc Power WE Write Enable Input Vss Ground A0~A17 Address Inputs DNU Do Not Use FUNCTIONAL BLOCK DIAGRAM PRODUCT FAMILY 1. The parameter is measured with 30pF test load. 2. Typical values are measured at VCC=3.0V, TA=25 °C and not 100% tested. Product Family Operating Temperature Vcc Range Speed(ns) Power Dissipation PKG Type Standby (ISB1, Typ) Operating (ICC1, Max) K6F2008T2E-F Industrial(-40~85 °C) 2.7~3.6V 551)/70ns 0.5 µA2) 3mA 32-TSOP1-0813.4F SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. Precharge circuit. Memory array 1024 rows 256x8 columns I/O Circuit Column select Clk gen. Row select I/O1 Data cont Data cont I/O8 CS1 CS2 WE OE Control logic Address A11 A9 A8 A13 WE CS2 A15 VCC A17 A16 A14 A12 A7 A6 A5 A4 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3 32-sTSOP Type1-Forward 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
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