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TIP111 Datasheet(PDF) 1 Page - ON Semiconductor |
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TIP111 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page 1 Motorola Bipolar Power Transistor Device Data Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc VCEO(sus) = 60 Vdc (Min) — TIP110, TIP115 VCEO(sus) = 80 Vdc (Min) — TIP111, TIP116 VCEO(sus) = 100 Vdc (Min) — TIP112, TIP117 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors • TO–220AB Compact Package *MAXIMUM RATINGS Rating Symbol TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 Unit Collector–Emitter Voltage VCEO 60 80 100 Vdc Collector–Base Voltage VCB 60 80 100 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous Peak IC 2.0 4.0 Adc Base Current IB 50 mAdc Total Power Dissipation @ TC = 25_C Derate above 25 _C PD 50 0.4 Watts W/ _C Total Power Dissipation @ TA = 25_C Derate above 25 _C PD 2.0 0.016 Watts W/ _C Unclamped Inductive Load Energy — Figure 13 E 25 mJ Operating and Storage Junction TJ, Tstg – 65 to + 150 _C THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction to Case R θJC 2.5 _C/W Thermal Resistance, Junction to Ambient R θJA 62.5 _C/W 0 0 20 40 60 80 100 120 160 Figure 1. Power Derating T, TEMPERATURE ( °C) 40 20 60 140 TC 0 2.0 1.0 3.0 TA TA TC Preferred devices are Motorola recommended choices for future use and best overall value. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP110/D © Motorola, Inc. 1995 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 – 100 VOLTS 50 WATTS *Motorola Preferred Device * NPN PNP * * * CASE 221A–06 TO–220AB REV 1 |
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