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2SA1535 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SA1535 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Power Transistors 2SA1535, 2SA1535A Silicon PNP epitaxial planar type For low-frequency driver and high power amplification Complementary to 2SC3944 and 2SC3944A s Features q Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics q High transition frequency fT q Makes up a complementary pair with 2SC3944 and 2SC3944A, which is optimum for the driver-stage of a 60 to 100W output amplifier. s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –150 –180 –150 –180 –5 –1.5 –1 15 2.0 150 –55 to +150 Unit V V V A A W ˚C ˚C 2SA1535 2SA1535A 2SA1535 2SA1535A TC=25°C Ta=25 °C Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –150V, IE = 0 IC = –1mA, IB = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –5V, IC = –500mA IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA VCE = –10V, IC = –50mA, f = 10MHz VCB = –10V, IE = 0, f = 1MHz min –150 –180 –5 90 50 typ 160 100 – 0.5 –1.0 200 30 max –10 220 –2.0 –2.0 50 Unit µA V V V V MHz pF 2SA1535 2SA1535 2SA1535A *h FE1 Rank classification Rank Q R hFE1 90 to 155 130 to 220 |
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