STM8S003F3 datasheet(85/103 Pages) STMICROELECTRONICS

Part #	STM8S003F3

Description	Value line, 16-MHz STM8S 8-bit MCU, 8-Kbyte Flash memory, 128-byte data EEPROM, 10-bit ADC, 3 timers, UART, SPI, I짼C

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DS7147 Rev 10

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STM8S003F3 STM8S003K3

Electrical characteristics

87

9.3.11

EMC characteristics

Susceptibility tests are performed on a sample basis during product characterization.

Functional EMS (electromagnetic susceptibility)

While executing a simple application (toggling 2 LEDs through I/O ports), the product is

stressed by two electromagnetic events until a failure occurs (indicated by the LEDs).

•

ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device

until a functional disturbance occurs. This test conforms with the IEC 61000-4-2

standard.

•

FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS

through a 100 pF capacitor, until a functional disturbance occurs. This test conforms

with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed. The test results are given in the

table below based on the EMS levels and classes defined in application note AN1709.

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical

application environment and simplified MCU software. It should be noted that good EMC

performance is highly dependent on the user application and the software in particular.

Therefore it is recommended that the user applies EMC software optimization and

prequalification tests in relation with the EMC level requested for his application.

Software recommendations

The software flowchart must include the management of runaway conditions such as:

•

Corrupted program counter

•

Unexpected reset

•

Critical data corruption (control registers...)

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

recovered by applying a low state on the NRST pin or the oscillator pins for 1 second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Table 48. EMS data

Symbol

Parameter

Conditions

Level/class

VFESD

Voltage limits to be applied on any I/O pin to

induce a functional disturbance

VDD = 3.3 V, TA = 25 °C,

fMASTER = 16 MHz,

conforming to IEC 61000-4-2

2B(1)

1. Data obtained with HSI clock configuration, after applying HW recommendations described in AN2860 -

EMC guidelines for STM8Smicrocontrollers.

VEFTB

Fast transient voltage burst limits to be

applied through 100pF on VDD and VSS pins

to induce a functional disturbance

VDD = 3.3 V, TA = 25 °C,

fMASTER = 16 MHz,

conforming to IEC 61000-4-4

4A(1)

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