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10
8
6
4
2
0
Jun - 02
Fig. 1a: Maximum power dissipation versus
RMS on-state current (FT0807.D, FT0808.D).
0
25
50
75
100
125
P (W)
Fig. 2: Correlation between maximum power dissipation
and maximum allowable temperatures (Tamb and Tcase)
for different thermal resistances heatsink + contact.
T case (ºC)
-110
-115
-120
-125
Fig. 3: RMS on-state current versus ambient
temperature
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature
(typical values).
IGT, IH (Tj) / IGT, IH (Tj = 25 ºC)
FT08...D
SURFACE MOUNT TRIAC
I T(RMS) (A)
0
2
10
8
6
4
2
0
4
6
8
P (W)
Tamb (ºC)
Tj (ºC)
Tamb (ºC)
IT(RMS)(A)
1
3
5
7
α = 90 º
α = 60 º
α = 30 º
9
8
7
6
5
4
3
2
1
0
0
25
50
75
100
125
-40
0
2.5
2.0
1.5
1.0
0.5
0.0
40
80
120
-20
20
60
100
α
180 º
α
α = 180 º
α = 120 º
Fig. 1b: Maximum power dissipation versus
RMS on-state current (FT0811.D, FT0814.D).
0
2
10
8
6
4
2
0
4
6
8
P (W)
IT(RMS)(A)
1
3
5
7
α = 90 º
α = 60 º
α
180 º
α
α = 120 º
α = 180 º
α = 30 º
1.0
K = [Zth(j-c) / Rth (j-c)]
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
1E-3
1E-2
1E-1
1E+0
tp (s)
0.5
0.2
0.1
Rth=15 ºC/W
Rth=10 ºC/W
Rth=5 ºC/W
Rth=0 ºC/W
α = 180 º
Rth(j-a) = Rth(j-c)
α = 180 º
Rth(j-a) = 55 ºC/W
S(Cu) = 1.75 cm2
140
IH
IGT
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