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GS881Z36BD-300IT Datasheet(PDF) 32 Page - GSI Technology

Part # GS881Z36BD-300IT
Description  9Mb Pipelined and Flow Through Synchronous NBT SRAM
Download  39 Pages
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Manufacturer  GSI [GSI Technology]
Direct Link  http://www.gsitechnology.com
Logo GSI - GSI Technology

GS881Z36BD-300IT Datasheet(HTML) 32 Page - GSI Technology

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GS881Z18B(T/D)/GS881Z32B(T/D)/GS881Z36B(T/D)
Rev: 1.04 10/2004
32/39
© 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
JTAG Port Timing Diagram
JTAG Port Recommended Operating Conditions and DC Characteristics
Parameter
Symbol
Min.
Max.
Unit Notes
3.3 V Test Port Input High Voltage
VIHJ3
2.0
VDD3 +0.3
V1
3.3 V Test Port Input Low Voltage
VILJ3
–0.3
0.8
V
1
2.5 V Test Port Input High Voltage
VIHJ2
0.6 * VDD2
VDD2 +0.3
V1
2.5 V Test Port Input Low Voltage
VILJ2
–0.3
0.3 * VDD2
V1
TMS, TCK and TDI Input Leakage Current
IINHJ
–300
1
uA
2
TMS, TCK and TDI Input Leakage Current
IINLJ
–1
100
uA
3
TDO Output Leakage Current
IOLJ
–11
uA
4
Test Port Output High Voltage
VOHJ
1.7
V5, 6
Test Port Output Low Voltage
VOLJ
0.4
V
5, 7
Test Port Output CMOS High
VOHJC
VDDQ – 100 mV
V5, 8
Test Port Output CMOS Low
VOLJC
100 mV
V
5, 9
Notes:
1. Input Under/overshoot voltage must be –2 V > Vi < VDDn +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tTKC.
2. VILJ ≤ VIN ≤ VDDn
3. 0 V
≤ VIN ≤ VILJn
4. Output Disable, VOUT = 0 to VDDn
5. The TDO output driver is served by the VDDQ supply.
6. IOHJ = –4 mA
7. IOLJ = + 4 mA
8. IOHJC = –100 uA
9. IOHJC = +100 uA
tTH
tTS
tTKQ
tTH
tTS
tTH
tTS
tTKL
tTKL
tTKH
tTKH
tTKC
tTKC
TCK
TDI
TMS
TDO
Parallel SRAM input


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