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STP6NK50Z Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP6NK50Z
Description  N-CHANNEL 500V - 0.93 ohm - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP6NK50Z Datasheet(HTML) 3 Page - STMicroelectronics

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STP6NK50Z - STF6NK50Z - STD6NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =1mA,VGS = 0
500
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating,TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 50µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V, ID = 2.8 A
0.93
1.2
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =8 V, ID =2.8 A
4.3
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V,f= 1MHz,VGS = 0
690
100
20
pF
pF
pF
Coss eq. (3)
Equivalent Output
Capacitance
VGS =0V, VDS = 0V to 400V
52
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =250 V, ID =2.8 A
RG =4.7Ω VGS =10 V
(Resistive Load see, Figure 3)
12
23.5
31
23
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =400V, ID =5.6 A,
VGS =10V
24.6
4.9
13.3
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
5.6
22.4
A
A
VSD (1)
ForwardOnVoltage
ISD =5.6 A, VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5.6 A, di/dt = 100 A/µs
VDD =48V, Tj =25°C
(see test circuit, Figure 5)
254
1.2
10
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5.6 A, di/dt = 100 A/µs
VDD =48V, Tj = 150°C
(see test circuit, Figure 5)
360
1.9
11
ns
µC
A


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