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STP6NK50Z Datasheet(PDF) 3 Page - STMicroelectronics |
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STP6NK50Z Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page 3/12 STP6NK50Z - STF6NK50Z - STD6NK50Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1mA,VGS = 0 500 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS =Max Rating VDS =Max Rating,TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS =VGS,ID = 50µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS =10V, ID = 2.8 A 0.93 1.2 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =8 V, ID =2.8 A 4.3 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V,f= 1MHz,VGS = 0 690 100 20 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS =0V, VDS = 0V to 400V 52 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD =250 V, ID =2.8 A RG =4.7Ω VGS =10 V (Resistive Load see, Figure 3) 12 23.5 31 23 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =400V, ID =5.6 A, VGS =10V 24.6 4.9 13.3 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 5.6 22.4 A A VSD (1) ForwardOnVoltage ISD =5.6 A, VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5.6 A, di/dt = 100 A/µs VDD =48V, Tj =25°C (see test circuit, Figure 5) 254 1.2 10 ns µC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5.6 A, di/dt = 100 A/µs VDD =48V, Tj = 150°C (see test circuit, Figure 5) 360 1.9 11 ns µC A |
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