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TDA8261TW Datasheet(PDF) 11 Page - NXP Semiconductors |
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TDA8261TW Datasheet(HTML) 11 Page - NXP Semiconductors |
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11 / 22 page  2004 Dec 02 11 Philips Semiconductors Product specification Satellite Zero-IF QPSK/8PSK downconverter with PLL synthesizer TDA8261TW CHARACTERISTICS Tamb =25 °C; VCC = 5 V; unless otherwise specified; RL =1kΩ on base band output IBBOUT and QBBOUT; Vo(p-p) = 750 mV on IBBOUT and QBBOUT. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VCC supply voltage 4.75 5.00 5.25 V ICC supply current − 130 − mA VPOR voltage limit where POR active − 2.7 − V Performances from pins RFA or RFB to pins IBBOUT or QBBOUT LOleak LO leakage through pins RFA and RFB −−75 − dBm ∆Gv dynamic voltage gain range VAGC = 0 to 3 V 48 50 − dB Gv(max) maximum voltage gain VAGC =3V; see Figs 4 and 5 55 57 − dB Vo(p-p) output voltage (peak-to-peak) recommended value − 750 − mV IP2i 2nd-order interception point at RF input; VAGC =0V − 19 − dBm IP3i 3rd-order interception point at RF input; VAGC =0V − 14 − dBm F noise figure at maximum gain; VAGC = 3 V; see Fig.6 − 18 − dB Zo output impedance on pin IOUT and QOUT − 35 −Ω Zi input impedance on pin IBBIN and QBBIN − 1.0 − k Ω Gv(I-Q) voltage gain mismatch between I and Q in 22.5 MHz band with bypass capacity 100 nF between IOUT and IBBIN, QOUT and QBBIN −− 1dB ∆Φ absolute quadrature error VAGC = 1.5 V; Vo = 750 mV (peak to peak value); measured in baseband − 0 3 deg Pulling sensitivity 3/4LO sensitivity to pulling on the third harmonic of the external VCO see Table 9 and Fig.8 −−40 −35 dBc 5/4LO sensitivity to pulling on the fifth harmonic of the external VCO see Table 9 and Fig.8 −−40 −35 dBc VCO and synthesizer fosc oscillator frequency 950 − 2175 MHz ϕn(osc) oscillator phase noise in the satellite band foffset = 100 kHz; out of PLL loop bandwidth −−100 −94 dBc/Hz ϕn phase noise on baseband outputs foffset = 1 and 10 kHz; fCOMP = 1 MHz; see Fig.7 −−−78 dBc/Hz MDR main divider ratio 64 − 32767 |
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