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QM12N65P Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd

Part # QM12N65P
Description  N-Channel 650V (D-S) Power MOSFET
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

QM12N65P Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10 - Temperature vs. Drain-to-Source Voltage
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
VSD, Source-Drain Voltage (V)
0.1
1
10
100
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
T
J = 150 °C
T
J = 25 °C
V
GS = 0 V
1
10
100
1000
0.01
0.1
1
10
100
1000
VDS- Drain -to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Limited by R
DS(on)*
1 ms
10 ms
100 μs
Operation in this Area
Limited by R
DS(on)
TC = 25 °C
TJ = 150 °C
Single Pulse
BVDSS Limited
I
DM = Limited
TJ, Case Temperature (°C)
5
10
15
20
25
50
75
100
125
150
0
TJ, Junction Temperature (°C)
- 60
0
160
- 40 - 20
20
40
60
80 100 120 140
600
625
650
675
700
725
750
775
800
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
QM12N65P
4


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