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QM12N65P Datasheet(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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QM12N65P Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
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2 / 10 page  Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -60 °C/W Maximum Junction-to-Case (Drain) RthJC -0.8 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 650 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA -0.75 - V/°C Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ± 1 μA Zero Gate Voltage Drain Current IDSS VDS = 650 V, VGS = 0 V - - 1 μA VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 10 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 8 A - 0. Ω Forward Transconductance gfs VDS = 30 V, ID = 8 A - 16 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 2200 - pF Output Capacitance Coss - - Reverse Transfer Capacitance Crss - - Effective Output Capacitance, Energy Related a Co(er) VDS = 0 V to 520 V, VGS = 0 V -63 - Effective Output Capacitance, Time Related b Co(tr) - 213 - Total Gate Charge Qg VGS = 10 V ID = 8 A, VDS = 520 V -43 - nC Gate-Source Charge Qgs - Gate-Drain Charge Qgd -22 Turn-On Delay Time td(on) VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω -13 ns Rise Time tr -11 Turn-Off Delay Time td(off) -81 Fall Time tf -25 Gate Input Resistance Rg f = 1 MHz, open drain - 3.5 - Ω Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 15 A Pulsed Diode Forward Current ISM -- 40 Diode Forward Voltage VSD TJ = 25 °C, IS = 8 A, VGS = 0 V - - 1.5 V Reverse Recovery Time trr TJ = 25 °C, IF = IS = 8 A, dI/dt = 100 A/μs, VR = 400 V - 345 - ns Reverse Recovery Charge Qrr -4.5 - μC Reverse Recovery Current IRRM -35 - A S D G - 58 -5 4 20 210 - - - - - E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw QM12N65P 2 |
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