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K5L5628JTM Datasheet(PDF) 2 Page - Samsung semiconductor |
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K5L5628JTM Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 98 page Preliminary K5L5628JT(B)M Revision 1.0 November 2004 2 MCP MEMORY Preliminary Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM FEATURES <Common> • Operating Temperature : -30°C ~ 85°C • Package : 115Ball FBGA Type - 8.0mm x 12.0mm 0.8mm ball pitch 1.4mm (Max.) Thickness <NOR Flash> • Single Voltage, 1.7V to 1.95V for Read and Write operations • Organization - 16,772,216 x 16 bit ( Word Mode Only) • Read While Program/Erase Operation • Multiple Bank Architecture - 16 Banks (16Mb Partition) • OTP Block : Extra 256Byte block • Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : 90ns (54MHz) / 80ns (66MHz) - Synchronous Random Access Time : 88.5ns (54MHz) / 70ns (66MHz) - Burst Access Time : 14.5ns (54MHz) / 11ns (66MHz) • Burst Length : - Continuous Linear Burst - Linear Burst : 8-word & 16-word with No-wrap & Wrap • Block Architecture - Eight 4Kword blocks and five hundreds eleven 32Kword blocks - Bank 0 contains eight 4 Kword blocks and thirty-one 32Kword blocks - Bank 1 ~ Bank 15 contain four hundred eighty 32Kword blocks • Reduce program time using the VPP • Support Single & Quad word accelerate program • Power Consumption (Typical value, CL=30pF) - Burst Access Current : 30mA - Program/Erase Current : 15mA - Read While Program/Erase Current : 40mA - Standby Mode/Auto Sleep Mode : 25uA • Block Protection/Unprotection - Using the software command sequence - Last two boot blocks are protected by WP=VIL - All blocks are protected by VPP=VIL • Handshaking Feature - Provides host system with minimum latency by monitoring RDY • Erase Suspend/Resume • Program Suspend/Resume • Unlock Bypass Program/Erase • Hardware Reset (RESET) • Data Polling and Toggle Bits - Provides a software method of detecting the status of program or erase completion • Endurance 100K Program/Erase Cycles Minimum • Data Retention : 10 years • Support Common Flash Memory Interface • Low Vcc Write Inhibit <UtRAM> • Process Technology: CMOS • Organization: 8M x16 bit • Power Supply Voltage: VCC 2.5~2.7V, VCCQ 1.7~2.0V • Three State Outputs • Supports MRS (Mode Register Set) • MRS control - MRS Pin Control • Supports Power Saving modes - Partial Array Refresh mode Internal TCSR • Supports Driver Strength Optimization for system environment power saving. • Supports Asynchronous 4-Page Read and Asynchronous Write Operation • Supports Synchronous Burst Read and Synchronous Burst Write Operation • Synchronous Burst(Read/Write) Operation - Supports 4 word / 8 word / 16 word and Full Page(256 word) burst - Supports Linear Burst type & Interleave Burst type - Latency support : Latency 3 @ 52.9MHz(tCD 12ns) - Supports Burst Read Suspend in No Clock toggling - Supports Burst Write Data Masking by /UB & /LB pin control - Supports WAIT pin function for indicating data availability. • Max. Burst Clock Frequency : 52.9MHz SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. |
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