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RSS070P05-TB Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
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RSS070P05-TB Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
3 / 9 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 VGS =10Vthru5V VGS =4V VGS =3V V DS - Drain-to-Source Voltage (V) 0 0.006 0.012 0.018 0.024 0.030 0 10203040 50 VGS =10V VGS =4.5 V I D - Drain Current (A) 0 2 4 6 8 10 0 14284256 70 ID = 10.2 A VDS =20V VDS =10V VDS =32V Q g - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 012 34 TC = - 55 °C TC = 125 °C TC = 25 °C V GS - Gate-to-Source Voltage (V) Crss 0 900 1800 2700 3600 4500 0 8 16 24 32 40 Ciss Coss V DS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS =10.2V; ID =10.2 A VGS =4.5 V; ID =8.4 A T J - Junction Temperature (°C) E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RSS070P05-TB 3 |
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