2SD1267A datasheet(2/2 Pages) PANASONIC

Part #	2SD1267A

Description	Silicon PNP epitaxial planar type(For low-frequency power amplification)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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2

Power Transistors

2SB942, 2SB942A

PC —Ta

IC —VCE

IC —VBE

VCE(sat) —IC

hFE —IC

fT —IC

Area of safe operation (ASO)

Rth(t) —t

0

160

40

120

80

140

20

100

60

0

50

40

30

20

10

(1) T

C=Ta

(2) With a 100

× 100 × 2mm

Al heat sink

(3) With a 50

× 50 × 2mm

Al heat sink

(4) Without heat sink

(P

C=2W)

(1)

(4)

(3)

(2)

Ambient temperature Ta (˚C)

0

–12

–10

–8

–2

–6

–4

0

–6

–5

–4

–3

–2

–1

T

C=25˚C

–100mA

–80mA

–60mA

–40mA

–20mA

–10mA

–8mA

–5mA

I

B=–120mA

Collector to emitter voltage V

CE

(V)

0

–2.0

–1.6

– 0.4

–1.2

– 0.8

0

–10

–8

–6

–4

–2

T

C=100˚C

–25˚C

25˚C

V

CE=–4V

Base to emitter voltage V

BE

(V)

– 0.01

– 0.1

–1

–10

– 0.03

– 0.3

–3

– 0.01

– 0.03

– 0.1

– 0.3

–1

–3

–10

–30

–100

I

C/IB=10

25˚C

T

C=100˚C

–25˚C

Collector current I

C

(A)

– 0.01

– 0.1

–1

–10

– 0.03

– 0.3

–3

1

3

10

30

100

300

1000

3000

10000

V

CE=–4V

T

C=100˚C

25˚C

–25˚C

Collector current I

C

(A)

– 0.01

– 0.1

–1

–10

– 0.03

– 0.3

–3

1

3

10

30

100

300

1000

3000

10000

V

CE=–5V

f=10MHz

T

C=25˚C

Collector current I

C

(A)

–1

–10

–100

–1000

–3

–30

–300

– 0.01

– 0.03

– 0.1

– 0.3

–1

–3

–10

–30

–100

10ms

t=1ms

I

CP

I

C

Non repetitive pulse

T

C=25˚C

DC

Collector to emitter voltage V

CE

(V)

10–4

10

10–3

10–1

10–2

1103

102

104

10–2

10–1

1

10

103

102

(1)

(2)

(1) Without heat sink

(2) With a 100

× 100 × 2mm Al heat sink

Time t (s)

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