BTA208X-1000C datasheet(6/12 Pages) PHILIPS

Part #	BTA208X-1000C

Description	Three quadrant triacs high commutation

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Manufacturer	PHILIPS [NXP Semiconductors]

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BTA208X-1000C_1

Product data sheet

Rev. 01 — 4 October 2005

6 of 12

Philips Semiconductors

BTA208X-1000C

Three quadrant triacs high commutation

7.

Characteristics

[1]

Device will not trigger in the T2

− G+ quadrant.

Table 6:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

IGT

gate trigger current

VD = 12 V; IT = 0.1 A; see Figure 8 [1]

T2+ G+

2

6

35

mA

T2+ G

−

2

1335mA

T2

− G−

2

2335mA

IL

latching current

VD = 12 V; IGT = 0.1 A; see

Figure 10

T2+ G+

-

25

50

mA

T2+ G

−

-

4875mA

T2

− G−

-

3050mA

IH

holding current

VD = 12 V; IGT = 0.1 A; see

Figure 11

-

2050mA

VT

on-state voltage

IT = 10 A; see Figure 9

-

1.3

1.65

V

VGT

gate trigger voltage

VD = 12 V; IT = 0.1 A; see Figure 7

-

0.7

1.5

V

VD = 400 V; IT = 0.1 A; Tj = 125 °C

0.25

0.4

-

V

ID

off-state current

VD =VDRM(max); Tj = 125 °C

-

0.1

0.5

mA

Dynamic characteristics

dVD/dt

rate of rise of off-state

voltage

VDM =67% VDRM(max);

Tj = 125 °C; exponential waveform;

gate open circuit

1000

4000

-

V/

µs

dIcom/dt

rate of change of

commutating current

VDM = 400 V; Tj = 125 °C;

IT(RMS) = 8 A; without snubber;

gate open circuit; see Figure 12

12

32

-

A/ms

tgt

gate-controlled

turn-on time

ITM = 12 A; VD =VDRM(max);

IG = 0.1 A; dIG/dt = 5 A/µs

-2

-

µs

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