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BTA208X-1000C Datasheet(PDF) 6 Page - NXP Semiconductors |
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BTA208X-1000C Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page BTA208X-1000C_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 4 October 2005 6 of 12 Philips Semiconductors BTA208X-1000C Three quadrant triacs high commutation 7. Characteristics [1] Device will not trigger in the T2 − G+ quadrant. Table 6: Characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8 [1] T2+ G+ 2 6 35 mA T2+ G − 2 1335mA T2 − G− 2 2335mA IL latching current VD = 12 V; IGT = 0.1 A; see Figure 10 T2+ G+ - 25 50 mA T2+ G − - 4875mA T2 − G− - 3050mA IH holding current VD = 12 V; IGT = 0.1 A; see Figure 11 - 2050mA VT on-state voltage IT = 10 A; see Figure 9 - 1.3 1.65 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; see Figure 7 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.25 0.4 - V ID off-state current VD =VDRM(max); Tj = 125 °C - 0.1 0.5 mA Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM =67% VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit 1000 4000 - V/ µs dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 125 °C; IT(RMS) = 8 A; without snubber; gate open circuit; see Figure 12 12 32 - A/ms tgt gate-controlled turn-on time ITM = 12 A; VD =VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs -2 - µs |
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