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PDMB75B12 Datasheet(PDF) 3 Page - Nihon Inter Electronics Corporation

Part # PDMB75B12
Description  IGBT MODULE Dual 75A 1200V
Download  3 Pages
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Manufacturer  NIEC [Nihon Inter Electronics Corporation]
Direct Link  http://www.niec.co.jp
Logo NIEC - Nihon Inter Electronics Corporation

PDMB75B12 Datasheet(HTML) 3 Page - Nihon Inter Electronics Corporation

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PDMB75B12
0123
4
0
25
50
75
100
125
150
Forward Voltage VF (V)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
TC=25℃
TC=125℃
5
10
20
50
100
200
0.02
0.05
0.1
0.2
0.5
1
2
5
10
Series Gate Impedance RG (Ω)
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
tf
tr
ton
toff
VCC=600V
IC=75A
VGE=±15V
TC=25℃
0
400
800
1200
1600
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
Collector to Emitter Voltage V CE (V)
Fig.10- Reverse Bias Safe Operating Area (Typical)
RG=13Ω
VGE=±15V
TC≦125℃
0
150
300
450
1
2
5
10
20
50
100
200
500
-di/dt (A/μs)
Fig.9- Reverse Recovery Characteristics (Typical)
IRrM
trr
IF=75A
TC=25℃
10
-5
10
-4
10
-3
10
-2
10
-1
110
2x10
-3
5x10
-3
-2
2x10
-2
5x10
-2
-1
2x10
-1
5x10
-1
1
2
5
Time t （s）
fig11-Tansient Thermal Impedance
Tc=25℃
1 Shot Pulse
IGBT
FRD
1
1x10
1x10


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