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2SC3506 Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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2SC3506 Datasheet(HTML) 2 Page - Panasonic Semiconductor |
2 / 3 page 2 Power Transistors 2SC3506 PC —Ta IC —VCE VCE(sat) —IC VBE(sat) —IC hFE —IC fT —IC ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 140 20 100 60 0 160 120 40 100 140 80 20 60 (1) (3) (2) (1) T C=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (P C=3.0W) Ambient temperature Ta (˚C) 012 10 8 26 4 0 5 4 3 2 1 T C=25˚C 200mA 150mA 100mA 50mA 20mA 400mA I B=800mA Collector to emitter voltage V CE (V) 0.1 30 10 1 0.3 3 0.01 0.03 0.1 0.3 1 3 10 I C/IB=5 –25˚C 25˚C T C=100˚C Collector current I C (A) 0.1 30 10 1 0.3 3 0.01 0.03 0.1 0.3 1 3 10 I C/IB=5 T C=–25˚C 25˚C 100˚C Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 0.1 0.3 1 3 10 30 100 300 1000 T C=100˚C V CE=5V –25˚C 25˚C Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 0.1 0.3 1 3 10 30 100 300 1000 V CE=5V f=1MHz T C=25˚C Collector current I C (A) 08 26 47 15 3 0.01 0.03 0.1 0.3 1 3 10 30 100 t stg t f t on Pulsed t w=1ms Duty cycle=1% I C/IB=5 (2I B1=–IB2) V CC=250V T C=25˚C Collector current I C (A) 1 10 100 1000 3 30 300 0.003 0.01 0.03 0.1 0.3 1 3 10 Non repetitive pulse T C=25˚C I CP 1s t=10ms I C Collector to emitter voltage V CE (V) |
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