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2SB1443 Datasheet(PDF) 1 Page - Rohm |
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1 page 
2SB1443 Transistors Rev.A 1/2 Power Transistor (−50V, −2A) 2SB1443 Features 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / −50mA. 2) Excellent DC current gain characteristics. Absolute maximum ratings (Ta=25 °C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −50 −50 −6 −2 150 −55~+150 Unit V V V A (DC) −5 A (Pulse) ∗1 W °C °C ∗1 Single pulse, Pw=10ms Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1 ∗2 ∗2 Printed circuit board 1.7mm thick, collector plating 1cm or larger. 2 Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SB1443 ATV Q TV2 2500 Marking − ∗Denotes hFE Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob −50 −50 −6 − − − 120 − − − − − − − −0.15 − 200 36 − − − −0.1 −0.1 −0.35 270 − − V V V µA µA V − MHz pF IC =−50µA IC =−1mA IE =−50µA VCB =−50V VEB =−5V IC/IB =−1A/−50mA VCE/IC =−2V/−0.5A VCE =−2V, IE=0.5A, f=100MHz VCB =−10V, IE=0A, f=1MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ ∗ ∗ Measured using pulse current |
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