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PESD1LIN Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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PESD1LIN Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
2 / 3 page Electrical Characteristics(TA=25°C unless otherwise specified) Part Number Device Marking VRWM (V) VBR (V) IT (mA) VC @1A Vc IR μA (Max) C (Pf) (Typ.) (Max) (@A) 15 18.9 5 25 44 5 0.05 13 PESD1LIN AM 24 27.8 5 40 70 3 13 PESD1LIN 0.05 Tamb =25 °C Fig 3. Peak pulse power as a function of exponential pulse duration; typical values Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values 006aaa164 103 102 104 PPP (W) 10 tp (µs) 1104 103 10 102 Tj (°C) 0 200 150 50 100 001aaa193 0.4 0.8 1.2 PPP 0 PPP(25°C) Characteristic Curves Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 t ( µs) 040 30 10 20 001aaa630 40 80 120 IPP (%) 0 e−t 100 % IPP; 8 µs 50 % IPP; 20 µs 001aaa631 IPP 100 % 90 % t 30 ns 60 ns 10 % tr = 0.7 ns to 1 ns Rev : www.leiditech.com 01.06.2018 2/3 |
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