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2SD1857 Datasheet(PDF) 1 Page - Rohm |
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2SD1857 Datasheet(HTML) 1 Page - Rohm |
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1 / 4 page  2SC4132 / 2SD1857 Transistors Rev.A 1/3 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236. Absolute maximum ratings (Ta = 25 °C) Parameter Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 120 120 5 2 3 0.5 2 1 150 −55 to +150 Unit V V V A A W ∗1 ∗2 ∗3 2SC4132 2SD1857 °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 Single pulse Pw = 10ms ∗2 When mounted on a 40 × 40 × 0.7mm ceramic board. ∗3 When mounted on 1.7mm thick PCB having collector foll dimensions 1cm2 or more. Packaging specifications and hFE Type 2SC4132 MPT3 PQR CB ∗ T100 1000 2SD1857 ATV QR − TV2 2500 ∗ Denotes hFE Package hFE Marking Code Basic ordering unit (pieces) External dimensions (Unit : mm) ROHM : MPT3 EIAJ : SC-62 ROHM : ATV 2SD1857 2SC4132 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) (3) (1) (2) 0.5 4.0 2.5 1.0 0.45 (2) Collector 1.05 (3) Base Taping specifications (1) Emitter 0.5 (1) 0.65Max. 2.54 (2) 2.54 (3) 6.8 2.5 Electrical characteristics (Ta = 25 °C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) fT Cob 120 120 5 − − − − − − − − − − − 80 20 − − − 1 1 2 − − V V V µA µA V ∗ ∗ MHz pF IC = 50 µA IC = 1mA IE = 50 µA VCB = 100V VEB = 4V IC/IB = 1A/0.1A hFE 82 − 390 − VCE/IC = 5V/0.1A VCE = 5V , IE = −0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Transition frequency Output capacitance DC current transfer ratio ∗ Measured using pulse current. |
Similar Part No. - 2SD1857 |
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Similar Description - 2SD1857 |
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