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NVH4L020N120SC1 Datasheet(PDF) 2 Page - ON Semiconductor |
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NVH4L020N120SC1 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page NVH4L020N120SC1 www.onsemi.com 2 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Max Unit Junction−to−Case − Steady State (Note 2) RqJC 0.3 °C/W Junction−to−Ambient − Steady State (Notes 1, 2) RqJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 1200 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 1 mA, referenced to 25°C − 0.5 − V/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 1200 V TJ = 25°C − − 100 mA TJ = 175°C − − 1 mA Gate−to−Source Leakage Current IGSS VGS = +25/−15 V, VDS = 0 V − − ±1 mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 20 mA 1.8 2.7 4.3 V Recommended Gate Voltage VGOP −5 − +20 V Drain−to−Source On Resistance RDS(on) VGS = 20 V, ID = 60 A, TJ = 25°C − 20 28 mW VGS = 20 V, ID = 60 A, TJ = 175°C − 37 50 Forward Transconductance gFS VDS = 20 V, ID = 60 A − 36 − S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 800 V − 2943 − pF Output Capacitance COSS − 258 − Reverse Transfer Capacitance CRSS − 24 − Total Gate Charge QG(TOT) VGS = −5/20 V, VDS = 600 V, ID = 80 A − 220 − nC Threshold Gate Charge QG(TH) − 33 − Gate−to−Source Charge QGS − 66 − Gate−to−Drain Charge QGD − 63 − Gate−Resistance RG f = 1 MHz − 1.6 − W SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5) Turn−On Delay Time td(ON) VGS = −5/20 V, VDS = 800 V, ID = 80 A, RG = 2 W inductive load − 21.6 35 ns Rise Time tr − 21 34 Turn−Off Delay Time td(OFF) − 41 66 Fall Time tf − 10 20 Turn−On Switching Loss EON − 494 − mJ Turn−Off Switching Loss EOFF − 397 − Total Switching Loss Etot − 891 − DRAIN−SOURCE DIODE CHARACTERISTICS Continuous Drain−Source Diode Forward Current ISD VGS = −5 V, TJ = 25°C − − 46 A Pulsed Drain−Source Diode Forward Current (Note 3) ISDM − − 408 Forward Diode Voltage VSD VGS = −5 V, ISD = 30 A, TJ = 25°C − 3.7 − V |
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