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SM1F13NSK Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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SM1F13NSK Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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1 / 9 page  N-Channel 150 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) a Qg (Typ.) 150 0.080 at VGS = 10 V 5.4 23 nC 0.085 at VGS = 8 V 4.5 SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 80 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 5.4 A TC = 70 °C 5.1 TA = 25 °C 5.0b, c TA = 70 °C 4.5b, c Pulsed Drain Current IDM 22 Continuous Source-Drain Diode Current TC = 25 °C IS 4.5 TA = 25 °C 2.6b, c Single Pulse Avalanche Current L = 0.1 mH IAS 20 Single Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 5.9 W TC = 70 °C 3.8 TA = 25 °C 3.1b, c TA = 70 °C 2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 10 s RthJA 33 40 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM1F13NSK 1 |
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