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2SC3935 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SC3935 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Transistor 2SC3935 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing s Features q High transition frequency fT. q Small collector output capacitance Cob and common base reverse transfer capacitance Crb. q S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package 2.1 ±0.1 1.25 ±0.1 0.425 0.425 1 3 2 0.2 ±0.1 Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 10 3 50 150 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Common emitter reverse transfer capacitance Base time constant hFE ratio Symbol ICBO ICEO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob Crb rbb' · CC hFE(RATIO) Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 2.4V, IC = 7.2mA VCE = 2.4V, IC = 100µA IC = 20mA, IB = 4mA VCE = 2.4V, IC = 7.2mA, f = 200MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = –5mA, f = 31.9MHz VCE = 2.4V, IC = 100µA VCE = 2.4V, IC = 7.2mA min 10 3 75 75 1.4 0.75 typ 1.9 0.9 0.25 11.8 max 1 10 220 0.5 2.5 1.1 0.35 13.5 1.6 Unit µA µA V V V GHz pF pF ps *1h FE Rank classification Rank P Q hFE 75 ~ 130 110 ~ 220 Marking symbol : 1S |
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