FLASH MEMORY

9

K9F5608D0D

K9F5608R0D

K9F5608U0D

PRODUCT INTRODUCTION

The K9F5608X0D is a 264Mbit(276,824,064 bit) memory organized as 65,536 rows(pages) by 528 columns. Spare eight columns are

located from column address of 512~527. A 528-byte data register is connected to memory cell arrays accommodating data transfer

between the I/O buffers and memory during page read and page program operations.The memory array is made up of 16 cells that

are serially connected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of two NAND struc-

tured strings. A NAND structure consists of 16 cells. Total 135168 NAND cells reside in a block. The array organization is shown in

Figure 2-1. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis.

The memory array consists of 2048 separately erasable 16K-Byte blocks. It indicates that the bit by bit erase operation is prohibited

on the K9F5608X0D.

The K9F5608X0D has addresses multiplexed into 8 I/Os. This scheme dramatically reduces pin counts while providing high perfor-

mance and allows systems upgrades to future densities by maintaining consistency in system board design. Command, address and

data are all written through I/O

′s by bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch

Enable(CLE) and Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some com-

mands require one bus cycle. For example, Reset command, Read command, Status Read command, etc require just one cycle bus.

Some other commands like Page Program and Copy-back Program and Block Erase, require two cycles: one cycle for setup and the

other cycle for execution. The 32M-byte physical space requires 24 addresses, thereby requiring three cycles for word-level address-

ing: column address, low row address and high row address, in that order. Page Read and Page Program need the same three

address cycles following the required command input. In Block Erase operation, however, only the two row address cycles are used.

Device operations are selected by writing specific commands into the command register. Table 1 defines the specific commands of

the K9F5608X0D.

The device includes one block sized OTP(One Time Programmable), which can be used to increase system security or to provide

identification capabilities. Detailed information can be obtained by contact with Samsung.

Table 1. COMMAND SETS

Caution : Any undefined command inputs are prohibited except for above command set of Table 1.

Function

1st. Cycle

2nd. Cycle

Acceptable Command during Busy

Read 1

00h/01h

-

Read 2

50h

-

Read ID

90h

-

Reset

FFh

-

O

Page Program

80h

10h

Copy-Back Program

00h

8Ah

Block Erase

60h

D0h

Read Status

70h

-

O