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K9F5608D0D-PIB0 Datasheet(PDF) 10 Page - Samsung semiconductor

Part # K9F5608D0D-PIB0
Description  32M x 8 Bit NAND Flash Memory
Download  35 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9F5608D0D-PIB0 Datasheet(HTML) 10 Page - Samsung semiconductor

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FLASH MEMORY
10
K9F5608D0D
K9F5608R0D
K9F5608U0D
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F5608X0D-XCB0
:TA=0 to 70°C, K9F5608X0D-XIB0:TA=-40 to 85°C)
Parameter
Symbol
K9F5608R0D(1.8V)
K9F5608D0D(2.65V)
K9F5608U0D(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
VCC
1.65
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
VCCQ
1.65
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
VSS
00
0
0
0
0
00
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN/OUT
-0.6 to + 4.6
V
VCC
-0.6 to + 4.6
VCCQ
-0.6 to + 4.6
Temperature Under Bias
K9F5608X0D-XCB0
TBIAS
-10 to +125
°C
K9F5608X0D-XIB0
-40 to +125
Storage Temperature
K9F5608X0D-XCB0
TSTG
-65 to +150
°C
K9F5608X0D-XIB0
Short Circuit Current
Ios
5
mA


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