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QSL10 Datasheet(PDF) 2 Page - Rohm |
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QSL10 Datasheet(HTML) 2 Page - Rohm |
2 / 5 page QSL10 Transistors Rev.A 2/4 Absolute maximum ratings (Ta=25 °C) Tr1 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Parameter ∗1 Single pulse, Pw=1ms Symbol VCBO VCEO VEBO IC ICP Pc Tj Tstg Limits 15 12 6 1.5 0.9 150 −40 to +125 3 ∗2 ∗1 Unit V V V A A W / ELEMENT °C °C ∗2 Mounted on a 25mm 25mm t0.8mm ceramic substrate + + Di2 Parameter Symbol VRM VR IF Tj Tstg IFSM PD Limits 25 20 700 125 3 0.7 −40 to +125 Unit V V mA A °C °C Average rectified forward current Peak reverse voltage Forward current surge peak (60HZ, 1 ∞) Reverse voltage (DC) Junction temperature Range of storage temperature Power dissipation ∗ W / ELEMENT ∗ Mounted on a 25mm 25mm t0.8mm ceramic substrate Tr1&Di2 Parameter Symbol PD Limits 0.5 1.25 Unit Total power disipation ∗1 ∗2 W / ELEMENT W / ELEMENT ∗2 Mounted on a 25mm 25mm t0.8mm ceramic substrate. ∗1 Each terminal mounted on a recommended land. Electrical characteristics (Ta=25 °C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions 15 −− V IC =10µA Collector-base breakdown voltage BVCBO 12 −− V IC =1mA Collector-emitter breakdown voltage BVCEO 6 −− V IE =10µA Emitter-base breakdown voltage BVEBO −− 100 nA VCB =15V Collector cutoff current ICBO Emitter cutoff current −− 100 nA VEB =6V IEBO − 85 200 mV IC/IB =500mA/25mA Collector-emitter saturation voltage VCE(sat) 270 − 680 − VCE/IC =2V/200mA DC current gain hFE − 400 − MHz VCE =2V, IE=−200mA, f=100MHz Transition frequency fT − 12 − pF VCB =10V, IE=0A, f=1MHz Collector output capacitance Cob ∗ ∗ ∗ Pulsed Di2 Parameter Min. Typ. Max. Unit Conditions − 490 450 9 mV ns IF=700mA IF=IR=100mA, Irr=0.1IR VR=20V Symbol VF IR − −− − 200 µA Forward voltage Reverse current Reverse recovery fime trr |
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