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RN5001 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN5001 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page RN5001 2001-10-29 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN5001 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Small flat package l PC = 1~2W (mounted on ceramic substrate) l Complementary to RN6001 Equivalent Circuit Maximum Ratings (Ta = 25°C) Marking Characteristic Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.4 A Collector power dissipation PC 500 mW Collector power dissipation PC * 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C * : Mounterd on ceramic substrate (250mm2 × 0.8t) JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05g (typ.) Unit: mm |
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