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2SD1266A Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SD1266A Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 6 5 3 35 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 2SD1266 2SD1266A 2SD1266 2SD1266A TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICES ICEO IEBO VCEO hFE1 * hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 10V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V min 60 80 70 10 typ 30 0.5 2.5 0.4 max 200 200 300 300 1 250 1.8 1.2 Unit µA µA mA V V V MHz µs µs µs 2SD1266 2SD1266A 2SD1266 2SD1266A 2SD1266 2SD1266A *h FE1 Rank classification Rank Q P hFE1 70 to 150 120 to 250 Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification. |
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