SI7971DP datasheet(2/5 Pages) VISHAY

Part #	SI7971DP

Description	Dual P-Channel 12-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si7971DP

Vishay Siliconix

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Document Number: 72357

S-31610—Rev. A, 11-Aug-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 450 mA

- 0.40

- 1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 9.6 V, VGS = 0 V

-1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = - 9.6 V, VGS = 0 V, TJ = 55_C

-5

mA

On-State Drain Currenta

ID(on)

VDS v -5 V, VGS = - 4.5 V

-30

A

VGS = - 4.5 V, ID = - 11.7 A

0.014

0.018

Drain-Source On-State Resistancea

rDS(on)

VGS = - 2.5 V, ID = - 10.6 A

0.018

0.022

W

DS(on)

VGS = - 1.8 V, ID = - 3.5 A

0.023

0.029

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 11.7 A

37

S

Diode Forward Voltagea

VSD

IS = - 2.9 A, VGS = 0 V

- 0.7

- 1.2

V

Dynamicb

Total Gate Charge

Qg

39

60

Gate-Source Charge

Qgs

VDS = - 6 V, VGS = - 4.5 V, ID = - 11.7 A

6.5

nC

Gate-Drain Charge

Qgd

10

Gate Resistance

Rg

9.4

W

Turn-On Delay Time

td(on)

38

60

Rise Time

tr

VDD = - 6 V, RL = 6 W

60

90

Turn-Off Delay Time

td(off)

VDD = - 6 V, RL = 6 W

ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W

280

420

ns

Fall Time

tf

210

320

Source-Drain Reverse Recovery Time

trr

IF = - 2.9 A, di/dt = 100 A/ms

120

180

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

2.5

0

6

12

18

24

30

0

1234

5

VGS = 10 thru 2 V

TC = 125_C

-55

_C

1 V

25

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

1.5 V

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