1

Power Transistors

2SD1277, 2SD1277A

Silicon NPN triple diffusion planar type Darlington

For midium speed power switching

Complementary to 2SB951 and 2SB951A

q

q

High-speed switching

q

Full-pack package which can be installed to the heat sink with

one screw

Parameter

Collector to

base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

Ratings

60

80

60

80

7

12

8

45

2

150

–55 to +150

Unit

V

V

V

A

A

W

˚C

˚C

2SD1277

2SD1277A

2SD1277

2SD1277A

Ta=25

°C

Parameter

Collector cutoff

current

Emitter cutoff current

Collector to emitter

voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

*

Conditions

min

60

80

2000

500

20

typ

0.5

4

1

max

100

100

2

10000

1.5

2

Unit

µA

mA

V

V

V

MHz

µs

µs

µs

2SD1277

2SD1277A

2SD1277

2SD1277A

Rank

Q

P

2000 to 5000 4000 to 10000

Internal Connection

B

E

C

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

10.0

±0.2

5.5

±0.2

0.5

+0.2

–0.1

1.4

±0.1

1.3

±0.2

0.8

±0.1

2.54

±0.25

5.08

±0.5

2

13

2.7

±0.2

4.2

±0.2

φ3.1±0.1