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BUK9Y30-75B Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK9Y30-75B Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page Philips Semiconductors BUK9Y30-75B N-channel TrenchMOS™ logic level FET Product data Rev. 01 — 14 July 2004 5 of 12 9397 750 13724 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 6. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS =0V Tj =25 °C75 - - V Tj = −55 °C70 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =VGS; Figure 9 Tj =25 °C 1.1 1.5 2 V Tj = 175 °C 0.5 - - V Tj = −55 °C - - 2.3 V IDSS drain-source leakage current VDS = 75 V; VGS =0V Tj =25 °C - 0.02 1 µA Tj = 175 °C - - 500 µA IGSS gate-source leakage current VGS = ±15 V; VDS = 0 V - 2 100 nA RDSon drain-source on-state resistance VGS =5V; ID =15A; Figure 7 and 8 Tj =25 °C - 25 30 m Ω Tj = 175 °C- - 72 m Ω VGS = 4.5 V; ID =15A - - 34 m Ω VGS =10V; ID =15A - 23 28 m Ω Dynamic characteristics Qg(tot) total gate charge VGS =5V; VDD =60V; ID =25A; Figure 14 -19 - nC Qgs gate-to-source charge - 5 - nC Qgd gate-to-drain (Miller) charge - 9 - nC Ciss input capacitance VGS =0V; VDS =25V; f = 1 MHz; Figure 12 - 1550 2070 pF Coss output capacitance - 150 179 pF Crss reverse transfer capacitance - 60 80 pF td(on) turn-on delay time VDD = 30 V; RL = 1.2 Ω; VGS =5V; RG =10 Ω -16 - ns tr rise time - 106 - ns td(off) turn-off delay time - 51 - ns tf fall time - 83 - ns Source-drain diode VSD source-drain (diode forward) voltage IS = 15 A; VGS =0V; Figure 15 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = −100 A/µs VGS = −10 V; VDS =30V - 101 - ns Qr recovered charge - 115 - nC |
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