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MC100EP58DT Datasheet(PDF) 3 Page - ON Semiconductor

Part No. MC100EP58DT
Description  3.3V / 5V ECL 2:1 Multiplexer
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MC10EP58, MC100EP58
http://onsemi.com
3
10EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 3.)
–40
°C
25
°C
85
°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
20
28
37
20
30
39
22
31
40
mA
VOH
Output HIGH Voltage (Note 4.)
2165
2290
2415
2230
2355
2480
2290
2415
2540
mV
VOL
Output LOW Voltage (Note 4.)
1365
1490
1615
1430
1555
1680
1490
1615
1740
mV
VIH
Input HIGH Voltage (Single Ended)
2090
2415
2155
2480
2215
2540
mV
VIL
Input LOW Voltage (Single Ended)
1365
1690
1460
1755
1490
1815
mV
IIH
Input HIGH Current
150
150
150
µA
IIL
Input LOW Current
0.5
0.5
0.5
µA
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
3. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to –2.2 V.
4. All loading with 50 ohms to VCC–2.0 volts.
10EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 5.)
–40
°C
25
°C
85
°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
20
28
37
20
30
39
22
31
40
mA
VOH
Output HIGH Voltage (Note 6.)
3865
3990
4115
3930
4055
4180
3990
4115
4240
mV
VOL
Output LOW Voltage (Note 6.)
3065
3190
3315
3130
3255
3380
3190
3315
3440
mV
VIH
Input HIGH Voltage (Single Ended)
3790
4115
3855
4180
3915
4240
mV
VIL
Input LOW Voltage (Single Ended)
3065
3390
3130
3455
3190
3515
mV
IIH
Input HIGH Current
150
150
150
µA
IIL
Input LOW Current
0.5
0.5
0.5
µA
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
5. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to –0.5 V.
6. All loading with 50 ohms to VCC–2.0 volts.
10EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = –5.5 V to –3.0 V (Note 7.)
–40
°C
25
°C
85
°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
20
28
37
20
30
39
22
31
40
mA
VOH
Output HIGH Voltage (Note 8.)
–1135
–1010
–885
–1070
–945
–820
–1010
–885
–760
mV
VOL
Output LOW Voltage (Note 8.)
–1935
–1810
–1685
–1870
–1745
–1620
–1810
–1685
–1560
mV
VIH
Input HIGH Voltage (Single Ended)
–1210
–885
–1145
–820
–1085
–760
mV
VIL
Input LOW Voltage (Single Ended)
–1935
–1610
–1870
–1545
–1810
–1485
mV
IIH
Input HIGH Current
150
150
150
µA
IIL
Input LOW Current
0.5
0.5
0.5
µA
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
7. Input and output parameters vary 1:1 with VCC.
8. All loading with 50 ohms to VCC–2.0 volts.




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