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GT50J341 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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GT50J341 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 9 page GT50J341 1 Discrete IGBTs Silicon N-Channel IGBT GT50J341 GT50J341 GT50J341 GT50J341 Start of commercial production 2010-06 1. 1. 1. 1. Applications Applications Applications Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. 2. 2. 2. Features Features Features Features (1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.15 µs (typ.) (IC = 50 A) (4) Low saturation voltage: VCE(sat) = 1.6 V (typ.) (IC = 50 A) (5) FRD included between emitter and collector 3. 3. 3. 3. Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter 2014-01-07 Rev.3.0 |
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