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TRS16N65FB Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. TRS16N65FB
Description  SiC Schottky Barrier Diode
Download  6 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TRS16N65FB Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TRS16N65FB
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 
 ))))
Characteristics
Repetitive peak reverse voltage
Forward DC current
Forward pulse current
Power dissipation
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Mounting torque
Symbol
VRRM
IF(DC)
IFP
PD
IFSM
Tj
Tstg
TOR
Note
(Note 1)
(Note 2)
(Note 3)
Test Condition
Per Leg
Both Legs
Per Leg
Both Legs
Per Leg
Both Legs
Per Leg
Both Legs
Rating
650
8
16
80
160
83
166
65
130
175
-55 to 175
0.8
Unit
V
A
W
A
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: t = 50 µs
Note 2: Tc = 25 
Note 3: f = 50 Hz (half-sine wave, t = 10 ms)
5.
5.
5.
5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Characteristics
Thermal resistance (junction-to-case)
Thermal resistance (junction-to-ambient)
Symbol
Rth(j-c)
Rth(j-a)
Note
(Note 1)
(Note 2)
Test Condition
Per Leg
Both Legs
Max
1.8
0.9
50
Unit
/W
Note 1: Tc = 25 
Note 2: Ta = 25 
6.
6.
6.
6. Electrical Characteristics (Unless otherwise specified, Ta = 25
Electrical Characteristics (Unless otherwise specified, Ta = 25
Electrical Characteristics (Unless otherwise specified, Ta = 25
Electrical Characteristics (Unless otherwise specified, Ta = 25 
 ) (Per Leg)
) (Per Leg)
) (Per Leg)
) (Per Leg)
Characteristics
Forward voltage
Reverse current
Junction capacitance
Total junction capacitive
charge
(pulse measurement)
(pulse measurement)
Symbol
VF
IR
Cj
Qcj
Test Condition
IF = 4 A
IF = 8 A
VR = 650 V
VR = 400 V, f = 1 MHz
VR = 0.1 to 400 V
Min
Typ.
1.2
1.45
0.4
30
19.4
Max
1.6
40
Unit
V
µA
pF
nC
2020-07-03
Rev.1.0
©2019-2020
Toshiba Electronic Devices & Storage Corporation


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