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TC9WMB1FK Datasheet(PDF) 10 Page - Toshiba Semiconductor |
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TC9WMB1FK Datasheet(HTML) 10 Page - Toshiba Semiconductor |
10 / 15 page TC9WMB1FK,TC9WMB2FK 2002-07-31 10 Electrical Characteristics DC Characteristics (GND ==== 0 V, Topr ==== ----40 to 85°C) 1.8 < = VCC < 2.3 V 2.3 <= VCC <= 3.6 V 4.5 <= VCC <= 5.5 V Characteristics Symbol Test Condition Min Max Min Max Min Max Unit Input current ILI ¾ ¾ ±1 ¾ ±1 ¾ ±1 mA Output leakage current ILO ¾ ¾ ±1 ¾ ±1 ¾ ±1 mA IOL = 3.2 mA ¾ ¾ ¾ 0.4 ¾ 0.4 Low-level output voltage VOL IOL = 1.5 mA ¾ 0.5 ¾ ¾ ¾ ¾ V Quiescent supply current ICC1 ¾ ¾ 5 ¾ 5 ¾ 5 mA Supply current during read ICC2 f = 400 kHz ¾ 0.2* ¾ 0.3 ¾ 0.5 mA Supply current during write ICC3 f = 400 kHz ¾ ¾ ¾ 1.5 ¾ 2.0 mA *f = 100 kHz AC Characteristics (GND ==== 0 V, Topr ==== ----40 to 85°C) Test Conditions Input pulse voltage 0.1 ´ VCC~0.9 ´ VCC Input rise/fall time 20 ns Input/output testing voltage 0.5 ´ VCC Output load 100 pF + 1 kW pull-up resistor 1.8 < = VCC < 2.3 V 2.3 <= VCC <= 3.6 V 4.5 <= VCC <= 5.5 V Characteristics Symbol Min Max Min Max Min Max Unit SCL clock frequency fSCL 0 100 0 400 0 400 kHz SCL clock “low” time tLOW 4.7 ¾ 1.2 ¾ 1.2 ¾ ms SCL clock “high” time tHIGH 4.0 ¾ 0.6 ¾ 0.6 ¾ ms Noise suppression time tI ¾ 100 ¾ 50 ¾ 50 ns SDA output delay tAA 0.1 4.5 0.1 0.9 0.1 0.9 ms Bus free time tBUF 4.7 ¾ 1.2 ¾ 1.2 ¾ ms Start condition hold time tHD.STA 4.0 ¾ 0.6 ¾ 0.6 ¾ ms Start condition setup time tSU.STA 4.7 ¾ 0.6 ¾ 0.6 ¾ ms Data input hold time tHD.DAT 0 ¾ 0 ¾ 0 ¾ ns Data input setup time tSU.DAT 250 ¾ 200 ¾ 200 ¾ ns SCL, SDA input rise time tR ¾ 1.0 ¾ 0.3 ¾ 0.3 ms SCL, SDA input fall time tF ¾ 0.3 ¾ 0.3 ¾ 0.3 ms Stop condition setup time tSU.STO 4.7 ¾ 0.6 ¾ 0.6 ¾ ms SDA output hold time tDH 100 ¾ 50 ¾ 50 ¾ ns VCC RL = 1 kW SDA CL = 100 pF |
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