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Q67006-A9402 Datasheet(PDF) 10 Page - Infineon Technologies AG |
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Q67006-A9402 Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 16 page BTS 7750 GP Data Sheet 10 2001-02-01 Output stages Inverse diode of high-side switch; Forward-voltage V FH –0.8 1.2 V I FH = 3 A Inverse diode of lowside switch; Forward-voltage V FL –0.8 1.2 V I FL = 3 A Static drain-source on-resistance of highside switch R DS ON H – 7090m τ ISH =1A T j = 25 C Static drain-source on-resistance of lowside switch R DS ON L – 4560m τ ISL =1 A; V GL = 5 V T j = 25 C Static path on-resistance R DS ON ––285 m τ R DS ON H +RDS ON L I SH =1A; Short Circuit of highside switch to GND Initial peak SC current I SCP H 14 15 18 A T j = – 40 °C 10 12 15 A T j = + 25 °C 78.5 10 A T j = + 150 °C Short Circuit of highside switch to V S Output pull-down-resistor R O 8 1535k τ V DSL = 3 V Short Circuit of lowside switch to V S Initial peak SC current I SCP L 21 28 34 A T j = – 40 C 16 22 27 A T j = 25 C 11 14 18 A T j = 150 C 3.3 Electrical Characteristics (cont’d) I SH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 C < Tj < 150 C; 8 V < VS < 18 V unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min. typ. max. |
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