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IRLI3215PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRLI3215PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRLI3215PbF 2 www.irf.com Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 4.9mH RG = 25Ω, IAS = 7.2A. (See Figure 12) ISD ≤ 7.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%.
Caculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4. Uses IRL3215 data and test conditions. S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 7.2A, VGS = 0V trr Reverse Recovery Time ––– 160 240 ns TJ = 25°C, IF = 7.2A Qrr Reverse RecoveryCharge ––– 810 1210 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 12 48 A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.20 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.166 VGS = 10V, ID = 7.2A ––– ––– 0.184 Ω VGS = 5.0V, ID = 7.2A ––– ––– 0.208 VGS = 4.0V, ID = 6A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 8.3 ––– ––– S VDS = 25V, ID = 7.2A ––– ––– 25 µA VDS = 150V, VGS = 0V ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 35 ID = 7.2A Qgs Gate-to-Source Charge ––– ––– 4.1 nC VDS = 120V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 7.4 ––– VDD = 75V tr Rise Time ––– 45 ––– ns ID = 7.2A td(off) Turn-Off Delay Time ––– 38 ––– RG = 12Ω, VGS = 5.0V tf Fall Time ––– 36 ––– RD = 10.2Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 775 ––– VGS = 0V Coss Output Capacitance ––– 140 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 70 ––– ƒ = 1.0MHz, See Fig. 5 nH IGSS S D G LS InternalSourceInductance ––– 7.5 ––– RDS(on) StaticDrain-to-SourceOn-Resistance LD InternalDrainInductance 4.5 IDSS Drain-to-SourceLeakageCurrent |
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